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rev. 2 . 7 p age 1 20 1 1 -0 9 - 27 spp17n80c3 SPA17N80C3 cool mos? power transistor v ds 800 v r ds ( on ) 0.29 ? i d 17 a feature ? new revolutionary high voltage technology ? worldwide best r ds ( on ) in to 220 ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance ? p g -to-220-3-31: fully isolated package (2500 vac; 1 minute) p g -to220-3-31 p g -to220 p-to220-3-31 1 2 3 marking 17n80c3 17n80c3 type package ordering code spp17n80c3 p g -to220 q67040-s4353 SPA17N80C3 p g -to220-3-31 sp000216353 maximum ratings parameter symbol value unit spa continuous drain current t c = 25 c t c = 100 c i d 17 11 17 1) 11 1) a pulsed drain current, t p limited by t j max i d p uls 51 51 a avalanche energy, single pulse i d =3.4a, v dd =50v e as 670 670 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =17a, v dd =50v e ar 0.5 0.5 avalanche current, repetitive t a r limited by t j max i a r 17 17 a gate source voltage v gs 20 20 v gate source voltage ac (f >1hz) v gs 30 30 power dissipation, t c = 25c p tot 208 42 w spp operating and storage temperature t j , t st g -55...+150 c
rev. 2. 7 p age 2 20 1 1 -0 9 - 27 spp17n80c3 SPA17N80C3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 640 v, i d = 17 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.6 k/w thermal resistance, junction - case, fullpak r thjc _ fp - - 3.6 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja _ fp - - 80 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - 35 62 - soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 800 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =17a - 870 - gate threshold voltage v gs ( th ) i d =1000 a, v gs =v d s 2.1 3 3.9 zero gate voltage drain current i dss v ds =800v, v gs =0v, t j =25c t j =150c - - 0.5 - 25 250 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =11a t j =25c t j =150c - - 0.25 0.78 0.29 - ? gate input resistance r g f =1mhz, open drain - 0.7 -
rev. 2. 7 p age 3 20 11 -0 9 - 27 spp17n80c3 SPA17N80C3 electrical characteristics parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =11a - 15 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 2320 - pf output capacitance c oss - 1250 - reverse transfer capacitance c rss - 60 - effective output capacitance, 5) energy related c o(er) v gs =0v, v ds =0v to 480v - 59 - effective output capacitance, 6) time related c o(tr) - 124 - turn-on delay time t d(on) v dd =400v, v gs =0/10v, i d =17a, r g =4.7 ? , t j =125c - 25 - ns rise time t r - 15 - turn-off delay time t d(off) - 72 82 fall time t f - 6 9 gate charge characteristics gate to source charge q gs v dd =640v, i d =17a - 12 - nc gate to drain charge q gd - 46 - gate charge total q g v dd =640v, i d =17a, v gs =0 to 10v - 91 177 gate plateau voltage v ( plateau ) v dd =640v, i d =17a - 6 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 soldering temperature for to-263: 220c, reflow 5 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 6 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
rev. 2. 7 p age 4 20 11 -0 9 - 27 spp17n80c3 SPA17N80C3 electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 17 a inverse diode direct current, pulsed i sm - - 51 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =400v, i f = i s , d i f /d t =100a/s - 550 - ns reverse recovery charge q rr - 15 - c peak reverse recovery current i rrm - 51 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 1200 - a/s typical transient thermal characteristics symbol value unit symbol value unit spa spa r th1 0.00812 0.00812 k/w c th1 0.0003562 0.0003562 ws/k r th2 0.016 0.016 c th2 0.001337 0.001337 r th3 0.031 0.031 c th3 0.001831 0.001831 r th4 0.114 0.16 c th4 0.005033 0.005033 r th5 0.135 0.324 c th5 0.012 0.008657 r th6 0.059 2.522 c th6 0.092 0.412 spp spp external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
rev. 2. 7 p age 5 20 11 -0 9 - 27 spp17n80c3 SPA17N80C3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 160 180 200 w 240 spp17n80c3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 5 10 15 20 25 30 35 w 45 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
rev. 2. 7 p age 6 20 11 -0 9 - 27 spp17n80c3 SPA17N80C3 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 20 v ds 30 v 0 5 10 15 20 25 30 35 40 45 50 55 60 a 70 i d 5v 6v 7v 8v 20v 10v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 20 v ds 30 v 0 5 10 15 20 25 a 35 i d 4v 4.5v 5v 5.5v 6v 6.5v 20v 10v 8v 7v
rev. 2. 7 p age 7 20 11 -0 9 - 27 spp17n80c3 SPA17N80C3 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 5 10 15 20 25 a 35 i d 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 ? 1.5 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 7v 8v 10v 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 11 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 ? 1.6 spp17n80c3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 5 10 15 20 25 30 35 40 45 50 55 a 65 i d 25c 150c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 17 a pulsed 0 20 40 60 80 100 120 nc 160 q gate 0 2 4 6 8 10 12 v 16 spp17n80c3 v gs 0,8 v ds max ds max v 0,2
rev. 2. 7 p age 8 20 11 -0 9 - 27 spp17n80c3 SPA17N80C3 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp17n80c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 2 4 6 8 10 12 14 a 18 i ar t j (start) =125c t j (start) =25c 15 avalanche energy e as = f ( t j ) par.: i d = 3.4 a, v dd = 50 v 25 50 75 100 c 150 t j 0 50 100 150 200 250 300 350 400 450 500 550 600 mj 700 e as 16 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 720 740 760 780 800 820 840 860 880 900 920 940 v 980 spp17n80c3 v (br)dss
rev. 2. 7 p age 9 20 11 -0 9 - 27 spp17n80c3 SPA17N80C3 17 avalanche power losses p ar = f ( f ) parameter: e ar =0.5mj 10 4 10 5 10 6 hz f 0 50 100 150 200 250 300 350 400 w 500 p ar 18 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 500 600 v 800 v ds 0 10 1 10 2 10 3 10 4 10 5 10 pf c c iss c oss c rss 19 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 500 600 v 800 v ds 0 2 4 6 8 10 12 14 j 18 e oss
rev. 2. 7 p age 10 20 1 1-09 - 2 7 spp17n80c3 ??? SPA17N80C3 definition of diodes switching characteristics
20 11 -0 9 - 27 rev. 2. 7 p age 1 1 spp 17 n 8 0c3 spa 17 n 8 0c3 p g -to220-3-1 , pg-to220-3-21
20 11 -0 9 - 27 rev. 2 . 7 p age 1 2 spp 17 n 8 0c3 spa 17 n 8 0c3 p g -to220-3- 3 1 (fullpak)
rev. 2. 7 p age 1 3 20 11 -0 9 - 27 spp17n80c3 SPA17N80C3 publis h e d by inf i neon t e chnologies ag 81726 muni ch, germany ? 2007 infi n e o n te c hn o l o gi e s a g al l righ t s r e ser v ed. le gal d i sc l a ime r the i nf o r m a t io n giv e n in th is do cu men t s hal l i n no ev ent be regarded as a guarantee of condi t ions or c h aract e ri st ic s. w i th r e spe c t to any examp l e s or hin t s g i ven here in , any typ i ca l v a lue s s t at ed her e in and / o r any inf o r m at io n r e gar d i ng th e appl ica t io n o f the dev i c e , inf i n e o n te ch n o lo gi es h e r e by dis c la i m s any and al l war r a nt ies a nd l i ab il it i e s o f any k i nd, inc l ud ing w i tho u t limitat ion , w a rranties of no n- i n fringement of i n tell ectual property ri g h ts of any third pa rty. info rmatio n f o r further informati o n on technol o gy , del i v er y terms and condition s and prices, p l ea se conta c t th e ne arest i nfineon tech nolog i e s o ffice ( www.inf i neon .co m ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon techno logies, if a failure of such components can reasonably be expected to cause the failure of th at life-support device or system or to affect the safety or effectiven ess of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered.

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